| PART |
Description |
Maker |
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| BFC12 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC63 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC48 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC43 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
Seme LAB
|
| BFC50 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| GT30J122 |
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
|
Toshiba Corporation
Toshiba Semiconductor
|
| C-BUNDLE-ARK1550-1 |
15 Intel 4th Generation Core i5 Modular Fanless Panel PC
|
Advantech Co., Ltd.
|
| MIC-6313-A1A4E |
OpenVPX CPU Blade with Intel? 4th/ 5th Generation Core? Processor
|
Advantech Co., Ltd.
|
| GT30J322 |
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| USB2227-AHZS-XX USB2227-NU-05 USB222706 USB2228-AH |
4th Generation USB2.0 Flash Media Controller with Integrated Card Power FETs
|
SMSC[SMSC Corporation]
|
| SML1004R2GXN |
4TH GENERATION MOSFET N?CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
Seme LAB
|
